MgAl2O4 Magnesium aluminate (spinel)

MgAl2O4 Magnesium aluminate (spinel) single crystal is widely used in acoustic and microwave devices and fast IC epitaxial substrate.

Magnesium aluminate (MgAl2O4) can be used as a substrate for III-V nitride device thin films, and is also widely used in acoustic and microwave devices as well as fast IC epitaxial substrates. It can be used as one of the high-quality insulating lining substrates for ultra-high-speed large-scale integrated circuits.


Product Description

MgAl2O4 Magnesium aluminate (spinel) single crystal is widely used in acoustic and microwave devices and fast IC epitaxial substrate.

Magnesium aluminate (MgAl2O4) can be used as a substrate for III-V nitride device thin films, and is also widely used in acoustic and microwave devices as well as fast IC epitaxial substrates. It can be used as one of the high-quality insulating lining substrates for ultra-high-speed large-scale integrated circuits.


Main Features

Magnesium aluminate (MgAl2O4) exhibits good lattice matching with epitaxial silicon films.

The self doping amount of aluminum atoms in the epitaxial silicon thin layer is small, the thermal stability is good, the expansion coefficient of silicon is relatively close, the hardness is small, and the processing performance is good.


Material Properties

Growing directions

Czochralski method

Crystal structure

cube

Lattice constant

a=8.085Å

Melting point (℃)

2130℃

Density

3.64g/cm3

Moh's hardness

8

Pigment

White transparent

Thermal expansion coefficient to heat

7.45×10-6/℃

Crystal orientation

<100>,

Size

10x3,10x5,10x10,15x15,,20x15,20x20,Ф1″,Ф2″,

Thickness

0.5mm,1.0mm

Polishing

Single or double-sided

Crystal orientation

<100>、<110>、<111>±0.5º

Crystal face   orientation precision:

±0.5°

Edge orientation   precision:

2° (up to 1°)

Slant chip

The wafer with edge-oriented surfaces (1° -45°) can be   processed at specific requirements

Ra:

≤5Å(5µm×5µm)

Package

100 clean bag, 1000 ultra-clean room


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